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sa2420 low voltage rf transceiver e 2.45ghz product specification 1997 may 23 integrated circuits
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 2 1997 may 23 8531984 18069 description the sa2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and lo buffer ic designed for high-performance low-power communication systems for 2.4-2.5ghz applications. the lna has a 2.5db noise figure at 2.45ghz with 14db gain and an ip3 intercept of -3dbm at the input. the gain is stabilized by on-chip compensation to vary less than 0.2db over the -40 to +85 c temperature range. the wide-dynamic-range receive mixer has a 10.9db noise figure and an input ip3 of +2.8dbm at 2.45ghz. the nominal current drawn from a single 3v supply is 37ma in transmit mode and 22ma in receive mode. features ? low current consumption: 37ma nominal transmit mode and 22ma nominal receive mode ? fabricated on a high volume, rugged bicmos technology ? high system power gain: 22.5db (lna + mixer) at 2.45ghz ? tssop24 package ? excellent gain stability versus temperature and supply voltage ? -10dbm lo input power can be used to drive the mixer ? operates with either full or half frequency lo ? wide if range: 50500mhz pin configuration 1 2 3 4 5 6 7 8 9 10 11 12 13 14 24 23 22 21 20 19 18 17 16 15 dh package atten sw tx/rx sw gnd rf in/out gnd gnd gnd lna out v cc gnd gnd rx if out gnd lop lna in gnd gnd rx if out tx if in tx if in lo sw lom v cc lo chip en sr00164 figure 1. pin configuration applications ? 2.45ghz wlan front-end (802.11, ism) ordering information description temperature range order code dwg # 24-pin plastic thin shrink small outline package (surface-mount, tssop) -40 to +85 c SA2420DH sot355-1 block diagram 4 3 2 15 24 23 22 21 20 7 610 9 8 19 18 17 16 15 lo gnd lop gnd v cc rf in/ out gnd atten sw chip en gnd gnd lna out sw gnd lna gnd gnd 12 11 14 13 lom lo tx/rx sw gnd v cc lna in rx if out rx if out tx if in tx if in rx rx tx buffer freq. dbler bpf bpf pre-driver tx attenuator sr00165 x2 x1 figure 2. sa2420 block diagram
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 3 absolute maximum ratings symbol parameter rating units v cc supply voltage -0.3 to +6 v v in voltage applied to any pin -0.3 to (v cc + 0.3) v p d power dissipation, t a = 25 c (still air) 24-pin plastic tssop 555 mw t jmax maximum operating junction temperature 150 c p max maximum power (rf/if/lo pins) +20 dbm t stg storage temperature range 65 to +150 c note: 1. transients exceeding these conditions may damage the product. 2. maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratin gs may impact product reliability q ja : 24-pin tssop = 117 c/w 3. ic is protected for esd voltages for 2000v, excepts pins 10 and 12, which are protected up to 500v. recommended operating conditions symbol parameter rating units v cc supply voltage 2.7 to 5.5 v t a operating ambient temperature range -40 to +85 c t j operating junction temperature -40 to +105 c dc electrical characteristics v cc = +3v, t a = 25 c; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions min -4 s typ +4 s max units i cctx supply current, transmit lo mode = hi 25 37 45 ma i ccrx supply current, receive lo mode = hi 15 22 28 ma i cc off power down mode (tx/rx sw = low) lo mode = hi, lna gain = hi 0 10 m a v lna-in lna input voltage receive mode 0.855 v i lna-out lna output bias current receive mode 4.0 ma v lo 2.1 ghz lo buffer dc input voltage lo mode = hi 2.1 v v lo 1.05 ghz lo buffer dc input voltage lo mode = low 2.1 v v tx if tx mixer input voltage transmit mode 1.7 v v tx ifb tx mixer input voltage transmit mode 1.7 v
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 4 ac electrical characteristics v cc = +3v, t a = 25 c; lo in = -10dbm @ 2.1ghz; f rf = 2.45ghz; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions min -4 s typ +4 s max units low noise amplifier (in = pin 2; out = 23) s 21 amplifier gain lna gain = hi 12.7 14.0 15.3 db d s 21 / d t gain temperature sensitivity lna gain = hi -0.002 db/ c d s 21 / d v cc gain v cc drift lna gain = hi 0.3 db/v s 12 amplifier reverse isolation lna gain = hi -22 db s 11 amplifier input match 1 lna gain = hi -8 db s 22 amplifier output match 1 lna gain = hi -8 db iso isolation: lo 1 to lna in lo mode = hi, lna gain = hi -45 db p -1db amplifier input 1db gain compression lna gain = hi -15 dbm ip3 amplifier input third order intercept f 1 - f 2 = 1mhz, lna gain = hi -3 dbm nf amplifier noise figure (50 w ) lna gain = hi 2.3 2.5 2.7 db lna high overload mode s 21 amplifier gain lna gain = low 14.0 -13.3 12.0 db d s 21 / d t gain temperature sensitivity lna gain = low -0.01 db/ c d s 21 / d v cc gain v cc drift lna gain = low 0.3 db/v s 12 amplifier reverse isolation lna gain = low -16 db s 11 amplifier input match 1 lna gain = low -8 db s 22 amplifier output match 1 lna gain = low -8 db iso isolation: lo 1 to lna in lo mode = hi, lna gain = low -45 db p -1db amplifier input 1db gain compression lna gain = low +6 dbm ip3 amplifier input third order intercept f 1 - f 2 = 1mhz, lna gain = low 17 dbm nf amplifier noise figure (50 w ) lna gain = low 17 db rx mixer (rf = pin 19, if = pins 5 and 6, lo = pin 10 or 12, p lo = -10dbm) pg c power conversion gain into 50 w : matched to 50 using external balun circuitry. f s = 2.45ghz, f lo = 2.1ghz, f if = 350mhz 7.9 8.5 9.1 db d g c / d t gain temperature drift -0.016 db/ c d g c / d v cc gain v cc drift 0.34 db/v s 11rf input match at rf (2.45ghz) 1 -15 db nf m ssb noise figure (2.45ghz) (50 w ) 10.2 10.9 11.6 db p -1db mixer input 1db gain compression 11.4 -10.3 9.2 dbm ip3 input third order intercept f 1 - f 2 = 1mhz 1.7 2.8 3.9 dbm f rf rf frequency range 3 2.4 2.45 2.5 ghz f if if frequency range 3 300 350 400 mhz
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 5 ac electrical characteristics (continued) symbol parameter test conditions limits units symbol parameter test conditions min -4 s typ +4 s max units rx mixer spurious components (p in = p -1db ) p rf-if rf feedthrough to if c l = 2pf per side -35 dbc p lo-if lo feedthrough to if c l = 2pf per side -35 dbc tx mixer (rf = pin 19, if = pins 7 and 8, lo = pin 10 or 12, p lo = -10dbm) pg c power conversion gain: r l = 50 w r s = 50 w f s = 2.45ghz, f lo = 2.1ghz, f if = 350mhz 15.0 17 19.9 db d g c / d t gain temperature drift -0.032 db/ c d g c / d v cc gain voltage drift 0.4 db/v s 11rf output match at rf (2.45ghz) 1 -10 db nf m ssb noise figure (2.45ghz) (50 w ) 13.2 db p -1db output 1db gain compression 1.5 2.9 4.3 dbm ip3 output third order intercept f 1 - f 2 = 1mhz 10.1 +11.5 12.9 dbm f rf rf frequency range 3 2.4 2.45 2.5 ghz f if if frequency range 3 300 350 400 mhz tx mixer spurious components (p out = p -1db ) p if-rf if feedthrough to rf -29 dbc p lo-rf lo feedthrough to rf -20 dbc p 2lo-rf 2*lo feedthrough to rf -25 dbc p image-rf image feedthrough to rf -0 dbc lo buffer: full and half frequency inputs p lo lo drive level (see figure 16) -10 -7 5 dbm s 11-lo1 mixer input match (lo = 2.1ghz) lo mode = hi -10 db s 11-lo2 mixer input match (lo = 1.05ghz) lo mode = low -10 db f lo2g lo2g frequency range 3 lo mode = hi 1.9 2.1 2.3 ghz f lo1g lo1g frequency range 3 lo mode = low 0.85 1.05 1.25 ghz switching 2 t rx-tx receive-to-transmit switching time 1 m s t tx-rx transmit-to-receive switching time 1 m s t power up chip enable time 1 m s t pwr dwn chip disable time 1 m s notes: 1. with simple external matching 2. with 50pf coupling capacitors on all rf and if parts 3. this part has been optimized for the frequency range at 2.42.5 ghz. operation outside this frequency range may yield perform ance other than specified in this datasheet.
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 6 table 1. truth table chip-en txrx-sw lna-sw lo-sw mode lna gain lo freq. (typ) 0 x x x sleep n/s n/s 1 0 1 1 receive +14db 2.1ghz 1 0 0 1 receive -8db 2.1ghz 1 0 1 0 receive +14db 1.05ghz 1 0 0 0 receive -8db 1.05ghz 1 1 x 1 transmit n/s 2.1ghz 1 1 x 0 transmit n/s 1.05ghz functional description the sa2420 is a 2.45ghz transceiver front-end available in the tssop-24 package. this integrated circuit (ic) consists of a low noise amplifier (lna) and up- and down-converters. the injection of the local oscillator (lo) signal has two options: 1) direct injection of the lo signal at approximately 2ghz, or 2) injection of an lo signal at approximately 1ghz through an on-chip doubler. the sa2420 functions with a supply voltage range of 3 5 v (nominally). there is an enable/disable switch available to power up/down the entire chip in 1 m s, typically. this transceiver has several unique features. the lna has two operating modes: 1) high gain mode with a gain = +14db; and 2) low gain mode with a gain <-10db. the switch for this option is internal and is controlled externally by high and low logic to the pin. when the lna is switched into the attenuation mode, active matching circuitry (on-chip) is switched in (reducing the number of off-chip components required). to reduce power consumption when the chip is transmitting, the lna is automatically switched into a asleepo mode (internally) without the use of external circuitry. the up and down frequency converters are single-ended at the rf port of the mixers. the up and down converters share the same (rf) pin and use an internal switch for transmitting (up-converting) or receiving (down-converting) modes. the switch is controlled externally by high and low logic states. the rf port is matched to 50 w and has an input ip3 of +2.8dbm (mixer only). the down-convert mixer is buffered and has open collectors at the pins to allow for matching to common saw filters. the up-convert mixer has differential inputs (if port) and single-ended output (rf port), with an input pin to output pin gain of 17db. the output of the up-converter is designed for a power level = +3dbm (p -1db ). the mixers are fed by the two lo options. the available lo options are: direct injection (2.1ghz at the pin) or through an on-chip doubler. the doubler has a simple lc bandpass filter (internal) at its output which passes the second harmonic to the mixers. through an internal switch (controlled externally), either lo can be used depending on the designer's application. if an application requires the use of a 1.05ghz vco, then the doubler option would be used to double the frequency (2 1.05ghz = 2.1ghz) before being injected into the mixers. for a 2.1ghz vco, the direct option would be used. with this option, the signal passes through an on-chip buffer and is then injected into the mixers.
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 7 temperature ( c) 50 0 50 10 20 30 40 50 100 current (ma) r t x x sr01458 v cc = 3v figure 3. rx & tx currents vs temperature sr01459 volts (v) 23 5 10 20 30 40 50 6 current (ma) r t x x 4 t = 25 c figure 4. rx & tx currents vs voltage supply sr01460 temperature ( c) 50 0 50 2.0 2.4 2.6 2.8 3.0 100 noise figure (db) nf gain gain (db) 2.2 12.8 13.6 14.0 14.4 14.8 13.2 v cc = 3v figure 5. lna gain & 50 nf vs temperature sr01461 frequency (ghz) 2.400 2.425 2.450 2.0 2.4 2.6 2.8 3.0 2.475 noise figure (db) nf gain gain (db) 2.2 2.500 12.8 13.6 14.0 14.4 14.8 13.2 v cc = 3v figure 6. lna gain & 50 nf vs frequency
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 8 sr01462 volts (v) 23 4 2.0 2.4 2.6 2.8 3.0 5 noise figure (db) nf gain gain (db) 2.2 6 13 15 16 17 18 14 t = 25 c figure 7. lna gain & 50 nf vs supply voltage sr01463 frequency (ghz) 2.400 2.425 2.450 14.0 13.2 12.8 12.4 12.0 2.475 s21 loss (db) loss s12 s12(db) 13.6 2.500 27.0 25.4 24.6 23.8 23.0 26.2 t = 25 c v cc = 3v figure 8. lna loss mode & s12 vs frequency sr01464 volts (v) 23 4 20 15 10 5 0 5 input ip3 and 1 db gain compression (dbm) p1db ip3 6 t = 25 c figure 9. lna input ip3 and p1db vs supply voltage sr01465 frequency (ghz) 2.400 2.425 2.450 20 15 10 5 0 2.475 input ip3 and 1 db gain compression (dbm) p1db ip3 2.500 v cc = 3v t = 25 c figure 10. lna input ip3 and p1db vs frequency
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 9 sr01466 volts (v) 23 4 0 5 10 15 20 5 lna loss mdoe input ip3 and p1db (dbm) p1db ip3 6 t = 25 c figure 11. lna loss mode input ip3 and p1db vs voltage sr01467 temperature ( c) 50 0 9.0 10.6 11.4 11.8 50 ssb noise figure (db) nf gain conversion gain (db) 100 7.0 8.2 8.6 7.4 11.0 10.2 9.8 9.4 7.8 9.0 9.4 9.8 v cc = 3v figure 12. rx mixer conv. gain & ssb nf vs temperature sr01468 volt (v) 23 4 10.5 10.9 11.1 11.3 11.5 5 ssb noise figure (db) nf gain conversion gain (db) 10.7 6 8.0 8.8 9.2 9.6 10.0 8.4 t = 25 c figure 13. rx mixer conv. gain & ssb nf vs supply voltage sr01469 volts (v) 23 4 10 5 0 5 5 input ip3 and 1 db gain compression (dbm) p1db ip3 6 t = 25 c figure 14. rx mixer input ip3 and p1db vs supply voltage
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 10 sr01470 frequency (ghz) 2.400 2.425 2.450 10 5 0 5 2.475 input ip3 and 1 db gain compression (dbm) p1db ip3 2.500 v cc = 3v t = 25 c figure 15. rx mixer output ip3 and p1db vs frequency sr01471 lo power (dbm) 30 24 18 10 5 5 10 12 rx mixer conversion gain (db) 0 0 6 full (lo = 2.1 ghz) doubler (lo = 1.05 ghz figure 16. rx mixer conversion gain vs lo power sr01472 temperature ( c) 50 0 50 16 18 20 22 100 current (ma) gain power 6 0 6 12 saturated output power (db) v cc = 3v figure 17. tx mx conv. gain and output pwr vs temp. sr01473 lo power (dbm) 30 20 30 18 6 0 10 lo and image suppression (dbc) lo image 0 12 24 figure 18. tx mixer lo and image suppression
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 11 sr01474 volts (v) 23 12.8 13.2 13.6 13.8 5 ssb noise figure (db) 6 13.4 conversion gain (db) 13.0 18.0 19.2 20.4 21.0 19.8 18.6 4 nf gain t = 25 c figure 19. tx mixer gain & nf vs supply voltage sr01475 volts (v) 23 0 10 15 5 output p1db and ip3 (dbm) p1db ip3 6 5 4 t = 25 c figure 20. tx mixer output p1db and ip3 vs voltage sr01479 temperature ( c) 50 0 2 10 16 100 output ip3 and 1 db gain compression (dbm) p1db ip3 4 50 v cc = 3v figure 21. tx mixer output ip3 and p1db vs temperature sr01480 frequency (ghz) 2.400 2.425 0 9 12 2.475 output ip3 and 1 db gain compression (dbm) p1db ip3 2.500 6 2.450 3 v cc = 3v t = 25 c figure 22. tx mixer output ip3 and p1db vs frequency
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 12 gnd lna in gnd gnd rx if out rx if out tx if in tx if in gnd lop lo sw lom v lna out gnd gnd atten sw rf i/o gnd tx/rx sw gnd gnd enable cc v cc 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 145 v + cc 260 sw5 v cc c18 c15 1.5pf lna out rf i/o c14 33pf c13 1.5pf l4 100nh sw4 sw3 c11 33pf c12 100nf sw2 c16 100nf c17 10uf c2 c1 1.5pf lna in 1.5pf v cc 300 300 300 300 c5 10pf txin c4 3.3pf l1 47nh c3 10pf l2 27nh c6 100pf c8 10pf c7 10pf l3 33nh sw1 v cc gnd l0 c10 33pf r1 50 c9 33pf u1 v cc 200 lo sa2420 2.45 ghz low voltage rf transceiver xxx : 10 mils wide, xxx mils long on 31 mils thick of natural fr4 substrate sr01481 rxout (not used) (352 mhz) (352 mhz) figure 23.
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45 ghz 1997 may 23 13 sr01485 figure 24. sa2420 rf transciever
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45ghz 1997 may 23 14 tssop24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm sot355-1
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45ghz 1997 may 23 15 notes
philips semiconductors product specification sa2420 low voltage rf transceiver e 2.45ghz 1997 may 23 16 philips semiconductors and philips electronics north america corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performanc e. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under a ny patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copy right, or mask work right infringement, unless otherwise specified. applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. life support applications philips semiconductors and philips electronics north america corporation products are not designed for use in life support appl iances, devices, or systems where malfunction of a philips semiconductors and philips electronics north america corporation product can reasonab ly be expected to result in a personal injury. philips semiconductors and philips electronics north america corporation customers using or sel ling philips semiconductors and philips electronics north america corporation products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors and philips electronics north america corporation for any damages resulting from such improper use or sale. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 definitions data sheet identification product status definition objective specification preliminary specification product specification formative or in design preproduction product full production this data sheet contains the design target or goal specifications for product development. specifications may change in any manner without notice. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. date of release: 0597 document order number: 9397 750 03302

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